FP15R12YT3. Technische Information / technical information. Vorläufige Daten preliminary data

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1 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage TÝÎ = 25 C V Š» 2 V T = 8 C T = 25 C I ÒÓÑ I t«= ms, T = 8 C I ç T = 25 C PÚÓÚ W 25 V Š» +/-2 V Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Interner Gatewiderstand internal gate resistor Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn-on delay time (inductive load) nstiegszeit (induktive Last) rise time (inductive load) bschaltverzögerungszeit (ind. Last) turn-off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse bschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC data Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink I =, V Š = V, TÝÎ = 25 C I =, V Š = V, V Š ÙÈÚ,7, 2, V V I =, m, V Š = V Š, TÝÎ = 25 C V ŠÚÌ 5, 5,8,5 V V Š = - V... + V Q, µc TÝÎ = 25 C R ÍÒÚ, Â f = MHz, TÝÎ = 25 C, V Š = 25 V, V Š = V CÍþÙ, nf f = MHz, TÝÎ = 25 C, V Š = 25 V, V Š = V CØþÙ,4 nf V Š = 2 V, V Š = V, TÝÎ = 25 C I Š» 5, m V Š = V, V Š = 2 V, TÝÎ = 25 C I Š» 4 n I =, V Š = V V Š = ± V, R ÓÒ = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓÒ = 2 Â, I =, V Š = V V Š = ± V, R ÓÒ = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓÒ = 2 Â, I =, V Š = V V Š = ± V, R ÓËË = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓËË = 2 Â, I =, V Š = V V Š = ± V, R ÓËË = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓËË = 2 Â, I =, V Š = V, L» = 5 nh V Š = ± V, R ÓÒ = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓÒ = 2 Â, I =, V Š = V, L» = 5 nh V Š = ± V, R ÓËË = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓËË = 2 Â, t«ù, V Š ù V TÝÎù25 C, V = V, V ŠÑÈà = V Š» -LÙ Š di/dt pro IGBT per IGBT pro IGBT / per IGBT ð«èùúþ = W/(m K) / ðãøþèùþ = W/(m K) tá ÓÒ,55,55 tø,2,25 tá ÓËË,7,47 të,75,2 EÓÒ, 2, EÓËË,,5 I» RÚÌœ,, K/W RÚÌ,55 K/W

2 Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral I²t - value TÝÎ = 25 C Vçç 2 V IŒ t«= ms IŒç Vç = V, t«= ms, I²t 44, ²s Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge bschaltenergie pro Puls reverse recovery energy Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink IŒ =, V Š = V, TÝÎ = 25 C IŒ =, V Š = V, IŒ =, - diœ/dt = / Vç = V, V Š = - V, TÝÎ = 25 C Vç = V, V Š = - V, IŒ =, -diœ/dt = / Vç = V, V Š = - V, TÝÎ = 25 C Vç = V, V Š = - V, IŒ =, -diœ/dt = / Vç = V, V Š = - V, TÝÎ = 25 C Vç = V, V Š = - V, pro Diode per diode pro Diode / per diode ð«èùúþ = W/(m K) / ðãøþèùþ = W/(m K) VŒ,5,5 Iç 28, 27, QØ, 2, EØþÊ,5, 2, V V µc µc RÚÌœ,7, K/W RÚÌ,7 K/W Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Dio. forward current RMS maximum per diode Gleichrichter usgang Grenzeffektivstrom maximum RMS current at Rectifier output Stoßstrom Grenzwert surge forward current Grenzlastintegral I²t - value TÝÎ = 25 C Vçç V T = 8 C IŒç» 25 T = 8 C Iç» 25 tô = ms, TÝÎ = 25 C tô = ms, TÝÎ = C tô = ms, TÝÎ = 25 C tô = ms, TÝÎ = C Durchlassspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink IŒ» I²t TÝÎ = C, IŒ = VŒ, V TÝÎ = C VÅ,8 V TÝÎ = C rå,5 mâ TÝÎ = C, Vç = V Iç 2, 5, m pro Diode per diode pro Diode / per diode ð«èùúþ = W/(m K) / ðãøþèùþ = W/(m K) ²s ²s RÚÌœ,25,4 K/W RÚÌ,55 K/W 2

3 IGBT-Brems-Chopper / IGBT-brake-chopper Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage TÝÎ = 25 C V Š» 2 V TÊ = 8 C TÊ = 25 C I ÒÓÑ I t«= ms, T = 8 C I ç T = 25 C PÚÓÚ, W 25 V Š» +/-2 V Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Interner Gatewiderstand internal gate resistor Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn-on delay time (inductive load) nstiegszeit (induktive Last) rise time (inductive load) bschaltverzögerungszeit (ind. Last) turn-off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse bschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC data Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink I =, V Š = V, TÝÎ = 25 C I =, V Š = V, V Š ÙÈÚ,7, 2, V V I =, m, V Š = V Š, TÝÎ = 25 C V ŠÚÌ 5, 5,8,5 V V Š = - V... + V Q, µc f = MHz, TÝÎ = 25 C V Š = 25 V, V Š = V f = MHz, TÝÎ = 25 C V Š = 25 V, V Š = V R ÍÒÚ, Â CÍþÙ, nf CØþÙ,4 nf V Š = 2 V, V Š = V, TÝÎ = 25 C I Š» 5, m V Š = V, V Š = 2 V, TÝÎ = 25 C I Š» 4 n I =, V Š = V V Š = ± V, R ÓÒ = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓÒ = 2 Â, I =, V Š = V V Š = ± V, R ÓÒ = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓÒ = 2 Â, I =, V Š = V V Š = ± V, R ÓËË = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓËË = 2 Â, I =, V Š = V V Š = ± V, R ÓËË = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓËË = 2 Â, I =, V Š = V V Š = ± V, R ÓÒ = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓÒ = 2 Â, I =, V Š = V V Š = ± V, R ÓËË = 2 Â, TÝÎ = 25 C V Š = ± V, R ÓËË = 2 Â, t«ù ec, V Š ù V TÝÎù 25 C, V = V, V ŠÑÈà = V Š» -LÙ Š di/dt pro IGBT per IGBT pro IGBT / per IGBT ð«èùúþ = W/(m K) / ðãøþèùþ = W/(m K) tá ÓÒ,55,55 tø,2,25 tá ÓËË,7,47 të,75,2 EÓÒ,4,75 EÓËË,,5 I» RÚÌœ,, K/W RÚÌ,55 K/W

4 Diode-Brems-Chopper / Diode-brake-chopper Höchstzulässige Werte / maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I²t - value TÝÎ = 25 C Vçç 2 V IŒ tô = ms IŒç Vç = V, tô = ms, I²t, ²s Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge bschaltenergie pro Puls reverse recovery energy Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink IŒ =, V Š = V, TÝÎ = 25 C IŒ =, V Š = V, IŒ =, -diœ/dt = / Vç = V, V Š = - V, TÝÎ = 25 C Vç = V, V Š = - V, IŒ =, -diœ/dt = / Vç = V, V Š = - V, TÝÎ = 25 C Vç = V, V Š = - V, IŒ =, -diœ/dt = / Vç = V, V Š = - V, TÝÎ = 25 C Vç = V, V Š = - V, pro Diode per diode pro Diode / per diode ð«èùúþ = W/(m K) /ðãøþèùþ = W/(m K) VŒ 2, 2,25 Iç,, QØ,55 2,85 EØþÊ,55,5 2,5 V V µc µc RÚÌœ 2,5 2,8 K/W RÚÌ,75 K/W NTC-Widerstand / NTC-thermistor Nennwiderstand rated resistance bweichung von Ræåå deviation of Ræåå Verlustleistung power dissipation B-Wert B-value T = 25 C Rèë 5, kâ T = C, Ræåå = 4 Â ÆR/R -5 5 % T = 25 C Pèë 2, mw Rè = Rèë exp [Bèëõëå(/Tè - /(28, K))] Bèëõëå 75 K 4

5 Modul / module Isolations-Prüfspannung insulation test voltage Material für innere Isolation material for internal insulation Kriechstrecke creepage distance Luftstrecke clearance distance Vergleichszahl der Kriechwegbildung comparative tracking index Modulinduktivität stray inductance module Modulleitungswiderstand, nschlüsse - Chip module lead resistance, terminals - chip Höchstzulässige Sperrschichttemperatur maximum junction temperature Temperatur im Schaltbetrieb temperature under switching conditions Lagertemperatur storage temperature npreßkraft für mech. Bef. pro Feder mountig force per clamp Gewicht weight RMS, f = 5 Hz, t = min Vš» 2,5 kv Kontakt - Kühlkörper / terminal to heatsink Kontakt - Kontakt / terminal to terminal Kontakt - Kühlkörper / terminal to heatsink Kontakt - Kontakt / terminal to terminal T = 25 C, pro Schalter / per switch Ièé,5 7,5 2, 7,5 CTI > 225 min. typ. max. mm mm LÙ Š 4 nh R óôššó Rƒƒóô ó, 7, mâ TÝÎ ÑÈà C TÝÎ ÓÔ C TÙÚÃ C F 4-8 N G g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but guarantees no characteristics. It is valid with the appropriate technical explanations. 5

6 usgangskennlinie IGBT-Wechselr. (typisch) output characteristic IGBT-inverter (typical) I = f (V Š) V Š = V usgangskennlinienfeld IGBT-Wechselr. (typisch) output characteristic IGBT-inverter (typical) I = f (V Š) TÝÎ = 25 C V Š = V V Š = 7V V Š = V V Š = V V Š = V V Š = V 8 8 I [] I [] 2 2,,,,,2,5,8 2, 2,4 2,7, V Š [V],,5,,5 2, 2,5,,5 4, 4,5 5, V Š [V] Übertragungscharakteristik IGBT-Wechselr. (typisch) transfer characteristic IGBT-inverter (typical) I = f (V Š) V Š = 2 V Schaltverluste IGBT-Wechselr. (typisch) switching losses IGBT-inverter (typical) EÓÒ = f (I ), EÓËË = f (I ) V Š = ± V, R ÓÒ = 2 Â, R ÓËË = 2 Â, V Š = V,, TÝÎ = 25 C 5, EÓÒ EÓËË 2 4, 8 I [] E [], 2 2,, V Š [V], I []

7 Schaltverluste IGBT-Wechselr. (typisch) switching losses IGBT-Inverter (typical) EÓÒ = f (R ), EÓËË = f (R ) V Š = ± V, I =, V Š = V, Transienter Wärmewiderstand IGBT-Wechselr. transient thermal impedance IGBT-inverter ZÚÌœ = f (t) 8 7 EÓÒ EÓËË ZÚÌœ : IGBT E [] 5 4 ZÚÌœ [K/W], R [Â] Sicherer Rückwärts-rbeitsbereich IGBT-Wr. (RBSO) reverse bias safe operating area IGBT-inv. (RBSO) I = f (V Š) V Š = ± V, R ÓËË = 2 Â, i: rí[k/w]: τí[s]:,2,44 2,4,4,52,825 4,,782,,,, t [s] Durchlaßkennlinie der Diode-Wechselr. (typisch) forward characteristic of diode-inverter (typical) IŒ = f (VŒ) TÝÎ = 25 C I [] 8 IŒ [] 2 I, Modul I, Chip V Š [V],,5,,5 2, 2,5 VŒ [V] 7

8 Schaltverluste Diode-Wechselr. (typisch) switching losses diode-inverter (typical) EØþÊ = f (IŒ) R ÓÒ = 2 Â, V Š = V, Schaltverluste Diode-Wechselr. (typisch) switching losses diode-inverter (typical) EØþÊ = f (R ) IŒ =, V Š = V,,5,5 EØþÊ EØþÊ,25,25,, E [],75 E [],75,5,5,25,25, IŒ [], R [Â] Transienter Wärmewiderstand Diode-Wechselr. transient thermal impedance diode-inverter ZÚÌœ = f (t) Durchlaßkennlinie der Diode-Gleichrichter (typisch) forward characteristic of diode-rectifier (typical) IŒ = f (VŒ) ZÚÌœ : Diode TÝÎ = 25 C TÝÎ = C 2 ZÚÌœ [K/W] IŒ [] 8 2, i: rí[k/w]: τí[s]:,44,27 2,48,,44,25 4,42,5842,,,, t [s],,,2,,4,5,,7,8,,,,2 VŒ [V] 8

9 Durchlaßkennlinie der Diode-Brems-Chopper (typisch) forward characteristic of diode-brake-chopper (typical) IŒ = f (VŒ) NTC-Temperaturkennlinie (typisch) NTC-temperature characteristic (typical) R = f (T) 25 TÝÎ = 25 C RÚáÔ 2 IŒ [] R[Â] 5,,5,,5 2, 2,5, VŒ [V] T [ C]

10 Schaltplan / circuit diagram ϑ Gehäuseabmessungen / package outlines